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| Power Transistors 2SD1258 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q 1.5max. 1.1max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 200 150 6 2.5 1 0.1 40 1.3 150 -55 to +150 Unit V V 10.5min. 2.0 0.80.1 0.5max. 2.540.3 5.080.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 10.00.3 V A A A W C 1.5-0.4 2.0 3.0-0.2 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.080.5 1 2 3 C 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.2A IC = 0.5A, IB = 0.02A VCE = 4V, IC = 0.1A, f = 10MHz 25 150 500 2000 1 V MHz min typ max 100 100 Unit A A V *h FE Rank classification Q P Rank hFE 500 to 1200 800 to 2000 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 2000) in the rank classification. 4.40.5 14.70.5 +0.4 +0 1 Power Transistors PC -- Ta 50 0.5 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C IB=400A 350A 300A 0.3 250A 200A 0.2 150A 100A 0.1 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 50A 2SD1258 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC IC/IB=25 Collector power dissipation PC (W) Collector current IC (A) 40 (1) 0.4 3 TC=100C 30 1 0.3 25C 20 -25C 0.1 10 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 10000 hFE -- IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 IC/IB=25 fT -- IC VCE=4V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 3 25C 1 TC=100C 1000 300 100 30 10 3 TC=100C 25C -25C -25C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 1 0.01 0.03 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 10 3 ICP 1 0.3 300ms 0.1 0.03 0.01 1 3 10 30 100 300 1000 IC t=10ms 1ms 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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